S2-T3: Next generation gallium nitride HEMTs enabled by diamond substrates

Author

Tyhach, M. ; Altman, D. ; Bernstein, S. ; Korenstein, R. ; Cho, Jeon-Wook ; Goodson, Kenneth E. ; Francis, Daniel ; Faili, F. ; Ejeckam, F. ; Kim, Sungho ; Graham, Samual

Author_Institution

Raytheon, Tewksbury, MA, USA

fYear

2014

fDate

5-7 Aug. 2014

Firstpage

1

Lastpage

4

Abstract

This paper describes the thermal and electrical performance of GaN on Diamond devices, where the GaN on Diamond substrates are fabricated by taking epi from a host growth substrate and replacing it through direct growth of CVD diamond. We have found GaN on Diamond material improves thermal performance while maintaining electrical performance. This work demonstrates that GaN on Diamond technology can form the foundation of a next generation GaN device with 3X (or more) higher areal power density.

Keywords

III-V semiconductors; chemical vapour deposition; diamond; gallium compounds; high electron mobility transistors; wide band gap semiconductors; C; CVD; GaN on diamond devices; GaN-C; diamond substrates; electrical performance; next generation gallium nitride HEMT; thermal performance; Density measurement; Diamonds; Gallium nitride; Logic gates; Performance evaluation; Silicon carbide; Transistors; GaN; HEMT; diamond; thermal interface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Lester Eastman Conference on High Performance Devices (LEC), 2014

Conference_Location

Ithaca, NY

Type

conf

DOI

10.1109/LEC.2014.6951557

Filename

6951557