Experimental method for the determination of the energy distribution of stress-induced oxide traps

Author

Spinelli, Alessandro S. ; Lacaita, Andrea L. ; Rigamonti, Matteo ; Ghidini, Gabriella

Author_Institution

Dipt. di Sci. Chimiche, Fisiche e Matematiche, Univ. degli Studi dell´´Insubria, Como, Italy

Volume

20

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

106

Lastpage

108

Abstract

An experimental procedure for the determination of the energy distribution of oxide neutral traps is presented, showing the evolution of the stress-induced damage as a function of Fowler-Nordheim stress fluence and field. It is shown that the traps are mainly distributed around 2 eV from the oxide conduction band. Results are presented for different oxide technologies, investigating the effect of oxide nitridation and growth conditions on the trap energy distribution.

Keywords

ULSI; electron traps; insulating thin films; integrated circuit reliability; integrated circuit testing; nitridation; tunnelling; Fowler-Nordheim stress fluence; IC reliability; ULSI; gate oxides; growth conditions; neutral traps; oxide nitridation; oxide technologies; stress-induced oxide traps; trap energy distribution; Current measurement; Degradation; Electric breakdown; Electron traps; Energy measurement; Fault location; Filling; Stress; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.748903

Filename

748903