S3-P1: Reliability and lifetime of pseudomorphic UVC leds on AlN substrate under various stress condition

Author

Kitamura, Kokoro ; Grandusky, J.R. ; Moe, C.G. ; Chen, Jiann-Jong ; Mendrick, M.C. ; Li, Yuhua ; Toita, M. ; Nagase, K. ; Morishita, Takahiro ; Ishii, Hiroyuki ; Yamada, Shigeru ; Schowalter, L.J.

Author_Institution

Crystal IS Inc., Green Island, NY, USA

fYear

2014

fDate

5-7 Aug. 2014

Firstpage

1

Lastpage

5

Abstract

Reliability tests on packaged ultraviolet light-emitting diodes (LEDs) in the ultraviolet-C (UVC) range (<; 280 nm) were performed under various temperatures and currents. At higher case temperature, a greater degradation in output power was observed over 1,000 hours. Degradation in output power was also observed at higher operating currents. Some of the output power degradation can be attributed to increased leakage current generated in a subset of devices tested. Physical analysis of a stressed LED indicated a connection between degradation in output power and defects in multi-quantum well (MQW), originating from crystal defects in substrate.

Keywords

III-V semiconductors; aluminium compounds; crystal defects; leakage currents; life testing; light emitting diodes; semiconductor device reliability; semiconductor quantum wells; AlN; MQW; crystal defects; high operating currents; leakage current; lifetime; light-emitting diodes; multiquantum well; output power degradation; pseudomorphic UVC LED; reliability tests; ultraviolet-C range; various stress condition; Degradation; Leakage currents; Light emitting diodes; Power generation; Reliability; Stress; Substrates; Degradation failure analysis; aluminum nitride (AlN) light-emitting diode (LED); reliability; ultraviolet (UV);

fLanguage

English

Publisher

ieee

Conference_Titel

Lester Eastman Conference on High Performance Devices (LEC), 2014

Conference_Location

Ithaca, NY

Type

conf

DOI

10.1109/LEC.2014.6951561

Filename

6951561