Title :
S3-P1: Reliability and lifetime of pseudomorphic UVC leds on AlN substrate under various stress condition
Author :
Kitamura, Kokoro ; Grandusky, J.R. ; Moe, C.G. ; Chen, Jiann-Jong ; Mendrick, M.C. ; Li, Yuhua ; Toita, M. ; Nagase, K. ; Morishita, Takahiro ; Ishii, Hiroyuki ; Yamada, Shigeru ; Schowalter, L.J.
Author_Institution :
Crystal IS Inc., Green Island, NY, USA
Abstract :
Reliability tests on packaged ultraviolet light-emitting diodes (LEDs) in the ultraviolet-C (UVC) range (<; 280 nm) were performed under various temperatures and currents. At higher case temperature, a greater degradation in output power was observed over 1,000 hours. Degradation in output power was also observed at higher operating currents. Some of the output power degradation can be attributed to increased leakage current generated in a subset of devices tested. Physical analysis of a stressed LED indicated a connection between degradation in output power and defects in multi-quantum well (MQW), originating from crystal defects in substrate.
Keywords :
III-V semiconductors; aluminium compounds; crystal defects; leakage currents; life testing; light emitting diodes; semiconductor device reliability; semiconductor quantum wells; AlN; MQW; crystal defects; high operating currents; leakage current; lifetime; light-emitting diodes; multiquantum well; output power degradation; pseudomorphic UVC LED; reliability tests; ultraviolet-C range; various stress condition; Degradation; Leakage currents; Light emitting diodes; Power generation; Reliability; Stress; Substrates; Degradation failure analysis; aluminum nitride (AlN) light-emitting diode (LED); reliability; ultraviolet (UV);
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2014
Conference_Location :
Ithaca, NY
DOI :
10.1109/LEC.2014.6951561
