Title :
Metamorphic In/sub 0.4/Al/sub 0.6/As/In/sub 0.4/Ga/sub 0.6/As HEMTs on GaAs substrate
Author :
Bollaert, S. ; Cordier, Y. ; Hoel, Virginie ; Zaknoune, Mohammed ; Happy, H. ; Lepilliet, S. ; Cappy, A.
Author_Institution :
Dept. Hyperfrequences et Semicond., Inst. d´Electron. et de Microelectron. du Nord, Villeneuve d´Ascq, France
fDate :
3/1/1999 12:00:00 AM
Abstract :
New In/sub 0.4/Al/sub 0.6/As/In/sub 0.4/Ga/sub 0.6/As metamorphic (MM) high electron mobility transistors (HEMTs) have been successfully fabricated on GaAs substrate with T-shaped gate lengths varying from 0.1 to 0.25 μm. The Schottky characteristics are a forward turn-on voltage of 0.7 V and a gate breakdown voltage of -10.5 V. These new MM-HEMTs exhibit typical drain currents of 600 mA/mm and extrinsic transconductance superior to 720 mS/mm. An extrinsic current cutoff frequency fT of 195 GHz is achieved with the 0.1-μm gate length device. These results are the first reported for In/sub 0.4/Al/sub 0.6/As/In/sub 0.4/Ga/sub 0.6/As MM-HEMTs on GaAs substrate.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; -10.5 V; 0.1 to 0.25 micron; 0.7 V; 195 GHz; GaAs; In/sub 0.4/Al/sub 0.6/As-In/sub 0.4/Ga/sub 0.6/As; Schottky characteristics; T-shaped gate lengths; drain currents; extrinsic current cutoff frequency; extrinsic transconductance; forward turn-on voltage; gate breakdown voltage; metamorphic high electron mobility transistors; Breakdown voltage; Electron mobility; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Microwave devices; Substrates;
Journal_Title :
Electron Device Letters, IEEE
