Transistor configurations in integrated transistor antennas

A uniform method of analysing the six basic integrated antenna structures by taking the relevant device configurations into consideration is presented in this paper. The possibility of height reduction at resonance at low frequency operation is examined for normal and reverse bias operation of the device as well as push-pull and push-push modes of excitation of the antenna structures. Generalized high frequency analysis for the input impedance at feed points of a structure is worked out and results for particular cases, namely f.e.c.l. and f.e.b.l. are included. Possibility of using approximations for resonance at high frequencies is also outlined.