DocumentCode
147849
Title
S3-P11: Thin-film coatings for improved thermal performances of GaN-based HEMTs
Author
Aubry, Raphael ; Michel, N. ; Jacquet, J.C. ; Baczkowski, Leny ; Patard, O. ; Chartier, E. ; Lancereau, D. ; Bohbot, S. ; Di Forte Poisson, M.A. ; Oualli, M. ; Piotrowicz, S. ; Delage, S.L. ; Djouadi, A. ; Scudeller, Y. ; Ait-Aissa, K. ; Calus, J. ; Kohn,
Author_Institution
III-V Lab., Alcatel-Thales, Marcoussis, France
fYear
2014
fDate
5-7 Aug. 2014
Firstpage
1
Lastpage
4
Abstract
Thin-film coatings for improved performances of GaN-based HEMTs are investigated. AlN coatings are used either as primary or secondary passivation to reduce the thermal resistance of the transistors.
Keywords
III-V semiconductors; aluminium compounds; coatings; gallium compounds; high electron mobility transistors; thin films; wide band gap semiconductors; AlN coatings; GaN-AlN; GaN-based HEMT; secondary passivation; thermal performances; thermal resistance; thin-film coatings; Coatings; HEMTs; III-V semiconductor materials; Logic gates; MODFETs; Passivation; Silicon compounds; AlN coatings; GaN; HEMTs; Thermal Management;
fLanguage
English
Publisher
ieee
Conference_Titel
Lester Eastman Conference on High Performance Devices (LEC), 2014
Conference_Location
Ithaca, NY
Type
conf
DOI
10.1109/LEC.2014.6951566
Filename
6951566
Link To Document