Title :
S4-P1: Wide and extreme bandgap semiconductor devices for power electronics applications
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The present status of the research, development and commercialization of wide (SiC, GaN) and extreme (diamond, AlN) bandgap semiconductor devices for power electronics applications is presented. The technology obstacles and needs as well as future trend in these power devices are also discussed.
Keywords :
III-V semiconductors; gallium compounds; power semiconductor devices; silicon compounds; wide band gap semiconductors; GaN; SiC; extreme bandgap semiconductor devices; power electronics applications; wide bandgap semiconductor devices; Diamonds; Gallium nitride; HEMTs; MODFETs; Rectifiers; Silicon; Silicon carbide; 2H-GaN; 4H-SiC; AlN; diamond; power rectifiers; power transistors;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2014
Conference_Location :
Ithaca, NY
DOI :
10.1109/LEC.2014.6951567
