Title :
S4-P8: Applications for epitaxial lift-off of III-V materials
Author :
Stender, C.L. ; Youtsey, C. ; Tuminello, F. ; Osowski, M. ; Adams, J. ; Elarde, V. ; Miyamoto, Hideaki ; Wibowo, A. ; Hillier, G. ; Tatavarti, R. ; Pan, N.
Author_Institution :
MicroLink Devices Inc., Niles, IL, USA
Abstract :
Epitaxial lift-off (ELO) is a disruptive technology that can enable substantial performance enhancement and cost reduction for epitaxially grown III-V devices [1],[2],[3],[4]. MicroLink Devices, Inc (MLD) is a recognized technological leader in the field of compound semiconductor growth and high efficiency solar cell manufacturing. ELO is a process that involves selectively etching a “release” layer to detach the epitaxially grown functional III-V material from the substrate on which it is grown. The ELO process can be used on a variety of device architectures from solar cells to heterojunction bipolar transistors (HBTs) and light emitting diodes (LEDs).
Keywords :
III-V semiconductors; etching; heterojunction bipolar transistors; light emitting diodes; semiconductor epitaxial layers; solar cells; III-V materials; MicroLink Devices, Inc; epitaxial lift-off; etching; heterojunction bipolar transistors; light emitting diodes; release layer; solar cells; Detectors; Epitaxial growth; Gallium arsenide; Light emitting diodes; Photovoltaic cells; Substrates; Epitaxial Lift-Off (ELO); Heterojunction bipolar transitor (HBT) flexible; Light emitting diode (LED); Photovoltaic; Solar; cost reduction; high-efficiency; light-weight;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2014
Conference_Location :
Ithaca, NY
DOI :
10.1109/LEC.2014.6951569