DocumentCode :
1478751
Title :
Model for the Resistive Switching Effect in 
MIM Structures Based on the Transmission Properties of Narrow Constrictions
Author :
Miranda, Enrique A. ; Walczyk, Christian ; Wenger, Christian ; Schroeder, Thomas
Author_Institution :
Escola Tec. Super. d´´Eng., Univ. Autonoma de Barcelona, Bellaterra, Spain
Volume :
31
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
609
Lastpage :
611
Abstract :
A physics-based analytical model for the current-voltage (I-V) characteristics corresponding to the low and high resistive states in electroformed metal-insulator-metal structures with HfO2 layers is proposed. The model relies on the Landauer theory for the electron transport in mesoscopic systems. The switching phenomenon is ascribed to the modulation of the constriction´s bottleneck cross-sectional area associated with atomic rearrangements within the confinement path. The extracted parameter values allow one to conclude that the length and radius of the region that controls the conduction characteristics are in the nanometer range.
Keywords :
MIM structures; electric breakdown; electrical conductivity; electrical resistivity; electron transport theory; gold; hafnium compounds; high-k dielectric thin films; mesoscopic systems; titanium compounds; Au-HfO2-TiN; Landauer theory; MIM structures; atomic rearrangements; bottleneck cross-sectional area; conduction characteristics; confinement path; current-voltage characteristics; electroformed metal-insulator-metal structures; electron transport; mesoscopic systems; resistive states; resistive switching effect; transmission properties; Dielectric breakdown; high-$k$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2046310
Filename :
5454260
Link To Document :
