DocumentCode :
1478999
Title :
Development of a Cu/Low- k Stack Die Fine Pitch Ball Grid Array (FBGA) Package for System in Package Applications
Author :
Zhang, Xiaowu ; Lau, John H. ; Premachandran, C.S. ; Chong, Ser-Choong ; Wai, Leong Ching ; Lee, Vincent ; Chai, T.C. ; Kripesh, V. ; Sekhar, Vasarla Nagendra ; Pinjala, D. ; Che, F.X.
Author_Institution :
Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
Volume :
1
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
299
Lastpage :
309
Abstract :
Consumers´ demands have driven the industry toward devices and packages with low cost, high performance, and multiple functions. Stacking two or more chips into one package becomes a popular choice. In this paper, the development of a three-die stack fine pitch ball grid array package is reported. A 65 nm Cu/low-k die is used as the bottom die in the package to increase the speed of the chip with multilayer interconnect structures. Compared to the conventional dielectrics, low-k materials are softer and less resistant to thermal-mechanical stress induced by packaging processes. In this paper, finite element analysis is performed to minimize the stress in low-k layers and to address the low-k delamination issue. In the dicing evaluation, comparison among straight cut, bevel cut and two-step cut was performed in terms of die strength and chipping results. It is found that the bevel cut dicing method is the best dicing method. The die attach process (especially wire embedded film process) is optimized to ensure that no voids are present in the die attach materials after the bonding process. The ultralow loop wire bonding process (50 μm) is also well established. The maximum wire sweep for all test vehicles is less than 10% in the molding process. Finally, all samples for test vehicle 1 were shown to have successfully passed JEDEC component level tests such as thermal cycling for 1000 cycles (-40°C to 125°C) and high temperature storage (HTS at 150°C) for 1000 h.
Keywords :
ball grid arrays; copper; delamination; fine-pitch technology; finite element analysis; lead bonding; low-k dielectric thin films; system-in-package; thermal stresses; Cu; JEDEC component level tests; bevel cut dicing method; bonding process; dicing evaluation; die attach materials; die strength; finite element analysis; low-k delamination; low-k materials; low-k stack die fine pitch ball grid array package; maximum wire sweep; molding process; multilayer interconnect structures; size 65 nm; straight cut method; system in package; temperature -40 degC to 125 degC; temperature 150 degC; thermal cycling; thermal-mechanical stress; time 1000 h; two-step cut method; ultralow loop wire bonding process; Coatings; Copper; Microassembly; Packaging; Stress; Wire; 65 nm Cu/low-$k$ technology; design for reliability; stack die packaging; system in package;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2010.2100292
Filename :
5738183
Link To Document :
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