Title :
MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55 μm VCSELs
Author :
Sagnes, I. ; Le Roux, G. ; Meriadec, C. ; Mereuta, A. ; Saint-Girons, G. ; Bensoussan, M.
Author_Institution :
Lab. pour la Photonique et les Nanostructures, CNRS, Bagneux, France
fDate :
4/12/2001 12:00:00 AM
Abstract :
A new MOCVD InP/AlGaInAs distributed Bragg reflector for long-wavelength VCSELs is presented. The InP/AlGaInAs system presents a high potential for 1.55 μm VCSELs owing to the combination of its high refractive index contrast (Δn≃0.34) and its low conduction band discontinuity (ΔEc≃150 meV). InP/AlGaInAs mirrors and one half VCSEL (bottom mirror and λ cavity) have been fabricated for the first time using AlGaInAs transparent to 1.55 μm
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; optical fabrication; refractive index; semiconductor lasers; surface emitting lasers; transparency; λ cavity; 1.55 mum; InP-AlGaInAs; InP/AlGaInAs; InP/AlGaInAs distributed Bragg reflector; MOCVD; VCSELs; bottom mirror; distributed Bragg reflector; fabrication; high refractive index contrast; long-wavelength VCSELs; low conduction band discontinuity; mirrors; one half VCSEL; transparency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010329
