Title :
BSIM3v3-based varactor model
Author :
Su, C.Y. ; Chen, L.P. ; Chang, S.J. ; Tseng, B.M. ; Lin, D.C. ; Lee, H.Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
4/12/2001 12:00:00 AM
Abstract :
A new varactor model based on the BSIM3v3 model (Berkeley short-channel IGFET model) is presented for the first time to model the behaviour of a silicon-based metal-insulator semiconductor varactor under different bias conditions and operating frequencies. The root mean square errors of the S-parameters between the measured and simulated data are less than 2%. The presented varactor model provides satisfactory performance prediction, which is necessary and critical for realising silicon radio frequency integrated circuits
Keywords :
CMOS integrated circuits; MMIC oscillators; MOSFET; S-parameters; equivalent circuits; field effect MMIC; semiconductor device models; varactors; voltage-controlled oscillators; BSIM3v3 model; Berkeley short-channel IGFET model; CMOS fabrication; RMS errors; S-parameters; Si-based MIS varactor; bias conditions; equivalent circuit; operating frequencies; performance prediction; radio frequency integrated circuits; varactor model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010355
