DocumentCode :
1479502
Title :
Electrical effects of SiNx deposition on GaN MESFETs
Author :
Boudart, B. ; Gaquière, C. ; Guhel, Y. ; de Jaeger, J.C. ; Poisson, M.A.
Author_Institution :
CNRS, Villeneuve, France
Volume :
37
Issue :
8
fYear :
2001
fDate :
4/12/2001 12:00:00 AM
Firstpage :
527
Lastpage :
528
Abstract :
The electrical effects of SiNx deposition on GaN MESFETs have been investigated. Significant effects induced from the dielectric coating have been observed depending on the deposition temperature used in the technological process. A power density increase of 30% has been observed after the device passivation performed at 200°C
Keywords :
III-V semiconductors; gallium compounds; leakage currents; microwave field effect transistors; passivation; plasma CVD; power MESFET; silicon compounds; wide band gap semiconductors; 200 C; GaN; I-V characteristics; MESFET; SiN; SiNx deposition; deposition temperature dependence; device passivation; dielectric coating; electrical effects; leakage current; plasma-enhanced CVD; power density increase; static drain current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010324
Filename :
920002
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1479502
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