• DocumentCode
    1479513
  • Title

    Gunn instabilities in power HEMTs

  • Author

    Dunn, G.M. ; Phillips, A. ; Topham, P.J.

  • Author_Institution
    Sch. of Phys., Aberdeen Univ., UK
  • Volume
    37
  • Issue
    8
  • fYear
    2001
  • fDate
    4/12/2001 12:00:00 AM
  • Firstpage
    530
  • Lastpage
    531
  • Abstract
    Experimental and theoretical evidence of the formation of `transverse´ Gunn dipoles in an Al0.23Ga0.77As/In 0.23Ga0.77As delta doped HEMT is presented. Monte Carlo simulations predicted that the dipoles would first cause a sudden reduction in current followed by a gradual upturn. These predictions were in excellent agreement with the experimental observations
  • Keywords
    Gunn effect; III-V semiconductors; Monte Carlo methods; aluminium compounds; current fluctuations; gallium arsenide; impact ionisation; indium compounds; power HEMT; semiconductor device breakdown; semiconductor device models; Al0.23Ga0.77As-In0.23Ga0.77 As; Gunn instabilities; Monte Carlo simulations; delta doped HEMT; impact ionisation; power HEMT; pseudomorphic HEMT; sudden current reduction; transverse Gunn dipoles;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010362
  • Filename
    920004
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1479513