DocumentCode :
147955
Title :
Experimental analysis of flip-flops minimum operating voltage in 28nm FDSOI and the impact of back bias and temperature
Author :
Bernard, Sebastien ; Belleville, Marc ; Valentian, Alexandre ; Legat, Jean-Didier ; Bol, David
Author_Institution :
LETI, CEA, Grenoble, France
fYear :
2014
fDate :
Sept. 29 2014-Oct. 1 2014
Firstpage :
1
Lastpage :
7
Abstract :
In this paper, the minimum operating voltage of master-slave flip-flops made in advanced fully-depleted silicon on insulator (FDSOI) technology, is studied through silicon measurements. A shift register of 1024 master-slave flip-flops has been fabricated in 28nm FDSOI technology in order to study the minimum operating voltage with respect to a wide back bias range allowed by the FDSOI technology. We show that a maximum yield is obtained for an optimum back bias couple (VBP for PMOS, VBN for NMOS) resulting from a tradeoff between speed and currents ratios. Results are given for a chain of 1, 16, 128, and 1024 FFs in series as well as for two different temperatures (30°C and 80°C). The minimum operating voltage of 1024 FFs is 230mV at 30°C for a back biasing of (VBP,VBN) = (-0.5V,0.5V) and 299mV at 80°C with (VBP,VBN) = (0V,0V).
Keywords :
flip-flops; shift registers; silicon-on-insulator; VBN; VBP; advanced FDSOI technology; advanced fully-depleted silicon on insulator technology; back bias range; master-slave flip-flops; minimum operating voltage; optimum back bias couple; shift register; silicon measurements; size 28 nm; temperature 30 C; temperature 80 C; voltage 230 mV; voltage 299 mV; Current measurement; Logic gates; MOS devices; Robustness; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power and Timing Modeling, Optimization and Simulation (PATMOS), 2014 24th International Workshop on
Conference_Location :
Palma de Mallorca
Type :
conf
DOI :
10.1109/PATMOS.2014.6951896
Filename :
6951896
Link To Document :
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