DocumentCode
1479740
Title
Hall Effects in Doubly Connected Specimens
Author
Kriisa, Annika ; Mani, R.G. ; Wegscheider, W.
Author_Institution
Dept. of Phys., Emory Univ., Atlanta, GA, USA
Volume
10
Issue
1
fYear
2011
Firstpage
179
Lastpage
182
Abstract
We examine the impact on the Hall effect, when a hole is inserted inside the canonical Hall geometry, in 2-D electron gas specimens that exhibit an ultrahigh mobility (μ ~ 107 cm2/V·s) at liquid helium temperatures. We demonstrate that an “anti-Hall bar” configuration generates an ordinary Hall effect within the interior boundary and that the interior Hall voltage divided by the interior injected current equals the Hall resistance. Further, we show that it is possible to simultaneously realize two independent Hall effects in the high-quality specimen by injecting two currents into a single doubly connected device.
Keywords
Hall mobility; III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor heterojunctions; two-dimensional electron gas; 2D electron gas; GaAs-AlGaAs; Hall effect; Hall resistance; Hall voltage; anti-Hall bar configuration; canonical Hall geometry; doubly connected specimen; interior injected current; 2-D electron gas; Hall effect; anti-Hall bar; magnetotransport;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2010.2049117
Filename
5454408
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