DocumentCode :
1479740
Title :
Hall Effects in Doubly Connected Specimens
Author :
Kriisa, Annika ; Mani, R.G. ; Wegscheider, W.
Author_Institution :
Dept. of Phys., Emory Univ., Atlanta, GA, USA
Volume :
10
Issue :
1
fYear :
2011
Firstpage :
179
Lastpage :
182
Abstract :
We examine the impact on the Hall effect, when a hole is inserted inside the canonical Hall geometry, in 2-D electron gas specimens that exhibit an ultrahigh mobility (μ ~ 107 cm2/V·s) at liquid helium temperatures. We demonstrate that an “anti-Hall bar” configuration generates an ordinary Hall effect within the interior boundary and that the interior Hall voltage divided by the interior injected current equals the Hall resistance. Further, we show that it is possible to simultaneously realize two independent Hall effects in the high-quality specimen by injecting two currents into a single doubly connected device.
Keywords :
Hall mobility; III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor heterojunctions; two-dimensional electron gas; 2D electron gas; GaAs-AlGaAs; Hall effect; Hall resistance; Hall voltage; anti-Hall bar configuration; canonical Hall geometry; doubly connected specimen; interior injected current; 2-D electron gas; Hall effect; anti-Hall bar; magnetotransport;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2010.2049117
Filename :
5454408
Link To Document :
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