• DocumentCode
    1479740
  • Title

    Hall Effects in Doubly Connected Specimens

  • Author

    Kriisa, Annika ; Mani, R.G. ; Wegscheider, W.

  • Author_Institution
    Dept. of Phys., Emory Univ., Atlanta, GA, USA
  • Volume
    10
  • Issue
    1
  • fYear
    2011
  • Firstpage
    179
  • Lastpage
    182
  • Abstract
    We examine the impact on the Hall effect, when a hole is inserted inside the canonical Hall geometry, in 2-D electron gas specimens that exhibit an ultrahigh mobility (μ ~ 107 cm2/V·s) at liquid helium temperatures. We demonstrate that an “anti-Hall bar” configuration generates an ordinary Hall effect within the interior boundary and that the interior Hall voltage divided by the interior injected current equals the Hall resistance. Further, we show that it is possible to simultaneously realize two independent Hall effects in the high-quality specimen by injecting two currents into a single doubly connected device.
  • Keywords
    Hall mobility; III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor heterojunctions; two-dimensional electron gas; 2D electron gas; GaAs-AlGaAs; Hall effect; Hall resistance; Hall voltage; anti-Hall bar configuration; canonical Hall geometry; doubly connected specimen; interior injected current; 2-D electron gas; Hall effect; anti-Hall bar; magnetotransport;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2010.2049117
  • Filename
    5454408