• DocumentCode
    1479777
  • Title

    M.O.S.F.E.T. temperature-drift performance limitations

  • Author

    Barker, R.W.J. ; Hart, B.L.

  • Volume
    42
  • Issue
    11
  • fYear
    1972
  • fDate
    11/1/1972 12:00:00 AM
  • Firstpage
    508
  • Lastpage
    510
  • Abstract
    An analysis, employing a minimum of restrictive assumptions, is presented that allows the temperature drift performance of m.o.s.f.e.t.s operated at a constant drain current in the pinch-off region to be assessed. The parabolic variation of gate-source voltage with temperature for devices working in the vicinity of the minimum drift bias point is related to device parameters, which are dependent on details of the manufacturing process. The detrimental effect of setting-up errors is considered.
  • Keywords
    field effect transistors; metal-insulator-semiconductor devices; MOSFET; drain current; gate source voltage; parabolic variation; pinch off region; setting up errors; temperature drift performance;
  • fLanguage
    English
  • Journal_Title
    Radio and Electronic Engineer
  • Publisher
    iet
  • ISSN
    0033-7722
  • Type

    jour

  • DOI
    10.1049/ree.1972.0087
  • Filename
    5268651