Title :
M.O.S.F.E.T. temperature-drift performance limitations
Author :
Barker, R.W.J. ; Hart, B.L.
fDate :
11/1/1972 12:00:00 AM
Abstract :
An analysis, employing a minimum of restrictive assumptions, is presented that allows the temperature drift performance of m.o.s.f.e.t.s operated at a constant drain current in the pinch-off region to be assessed. The parabolic variation of gate-source voltage with temperature for devices working in the vicinity of the minimum drift bias point is related to device parameters, which are dependent on details of the manufacturing process. The detrimental effect of setting-up errors is considered.
Keywords :
field effect transistors; metal-insulator-semiconductor devices; MOSFET; drain current; gate source voltage; parabolic variation; pinch off region; setting up errors; temperature drift performance;
Journal_Title :
Radio and Electronic Engineer
DOI :
10.1049/ree.1972.0087