DocumentCode :
1479777
Title :
M.O.S.F.E.T. temperature-drift performance limitations
Author :
Barker, R.W.J. ; Hart, B.L.
Volume :
42
Issue :
11
fYear :
1972
fDate :
11/1/1972 12:00:00 AM
Firstpage :
508
Lastpage :
510
Abstract :
An analysis, employing a minimum of restrictive assumptions, is presented that allows the temperature drift performance of m.o.s.f.e.t.s operated at a constant drain current in the pinch-off region to be assessed. The parabolic variation of gate-source voltage with temperature for devices working in the vicinity of the minimum drift bias point is related to device parameters, which are dependent on details of the manufacturing process. The detrimental effect of setting-up errors is considered.
Keywords :
field effect transistors; metal-insulator-semiconductor devices; MOSFET; drain current; gate source voltage; parabolic variation; pinch off region; setting up errors; temperature drift performance;
fLanguage :
English
Journal_Title :
Radio and Electronic Engineer
Publisher :
iet
ISSN :
0033-7722
Type :
jour
DOI :
10.1049/ree.1972.0087
Filename :
5268651
Link To Document :
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