DocumentCode
1479777
Title
M.O.S.F.E.T. temperature-drift performance limitations
Author
Barker, R.W.J. ; Hart, B.L.
Volume
42
Issue
11
fYear
1972
fDate
11/1/1972 12:00:00 AM
Firstpage
508
Lastpage
510
Abstract
An analysis, employing a minimum of restrictive assumptions, is presented that allows the temperature drift performance of m.o.s.f.e.t.s operated at a constant drain current in the pinch-off region to be assessed. The parabolic variation of gate-source voltage with temperature for devices working in the vicinity of the minimum drift bias point is related to device parameters, which are dependent on details of the manufacturing process. The detrimental effect of setting-up errors is considered.
Keywords
field effect transistors; metal-insulator-semiconductor devices; MOSFET; drain current; gate source voltage; parabolic variation; pinch off region; setting up errors; temperature drift performance;
fLanguage
English
Journal_Title
Radio and Electronic Engineer
Publisher
iet
ISSN
0033-7722
Type
jour
DOI
10.1049/ree.1972.0087
Filename
5268651
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