Title :
Micromechanical IBARs: Modeling and Process Compensation
Author :
Ho, Gavin K. ; Perng, John Kangchun ; Ayazi, Farrokh
Author_Institution :
Micromachined Products Div., Analog Devices, Inc., Cambridge, MA, USA
fDate :
6/1/2010 12:00:00 AM
Abstract :
Manufacturability is a major challenge before widespread adoption of micromechanical resonators as frequency references. In this paper, the limits of frequency accuracy for a silicon resonator are investigated. The factors to these limits, including starting materials and process variations, are investigated. Design for manufacturing utilizing process compensation (PC) is presented. The I-shaped bulk acoustic resonator (IBAR) is considered since it has features that enable PC. A lumped-element model for the IBAR is developed. Assuming that variations in resonator geometry are locally systematic, the effect of process bias on resonator frequency is modeled. A procedure to obtain low sensitivity to process variations is explained. Process bias variation (i.e., skew) on a 10-MHz design is replicated with electron beam lithography. PC of a micromechanical resonator, confirmed with experimental data, is demonstrated for the first time. From the observations, strategies for obtaining absolute single-digit ppm frequency accuracy are presented.
Keywords :
acoustic resonators; electron beam lithography; elemental semiconductors; micromechanical resonators; silicon; I-shaped bulk acoustic resonator; Si; design for manufacture; electron beam lithography; frequency 10 MHz; lumped-element model; micromechanical IBAR; micromechanical resonators; process compensation; process variations; resonator frequency; resonator geometry; silicon resonator; starting materials; Design centering; micromachining; microresonators; oscillators; process compensation (PC); resonators;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2009.2030076