Title :
46 GHz bandwidth monolithic InP/InGaAs pin/SHBT photoreceiver
Author :
Huber, D. ; Bitter, M. ; Morf, T. ; Bergamaschi, C. ; Melchior, H. ; Jäckel, H.
Author_Institution :
Electron. Lab., Fed. Inst. of Technol., Zurich, Switzerland
fDate :
1/7/1999 12:00:00 AM
Abstract :
An InGaAs pin-photodetector and a lumped SHBT transimpedance preamplifier have been monolithically integrated and characterised. The preamplifier achieves a transimpedance gain of 44.6 dB Ω (170 Ω) and the optical/electrical -3 dB bandwidth of the entire receiver is 46 GHz, which is the highest bandwidth for any HBT based photoreceiver reported to date
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; preamplifiers; 46 GHz; InP-InGaAs; InP/InGaAs photoreceiver; bandwidth; gain; lumped SHBT transimpedance preamplifier; monolithic integration; pin photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990053
