Title :
1.5 μm InGaAlAs-strained MQW ridge-waveguide laser diodes with hot-carrier injection suppression structure
Author :
Fukano, H. ; Noguchi, Y. ; Kondo, S.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
1/7/1999 12:00:00 AM
Abstract :
The authors have developed a ridge-waveguide laser diode (LD) with a layer structure which suppresses hot-carrier injection into separate confinement heterostructure layers as well as effectively confining carriers in the multiquantum well layers. Fabricated LDs show low threshold currents and improved temperature characteristics due to a decrease in the leakage current outside the ridge-waveguide caused by reduced carrier diffusion length
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; indium compounds; quantum well lasers; ridge waveguides; waveguide lasers; 1.5 micron; InGaAlAs; InGaAlAs strained MQW ridge waveguide laser diode; carrier confinement; carrier diffusion length; hot carrier injection suppression; leakage current; multiquantum well; separate confinement heterostructure layer; temperature characteristics; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990074
