Title :
9.5 W CW output power from high brightness 980 nm InGaAs/AlGaAs tapered laser arrays
Author :
Wilson, F.J. ; Lewandowski, J.J. ; Nayar, B.K. ; Robbins, D.J. ; Williams, P.J. ; Carr, N. ; Robson, F.O.
Author_Institution :
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
fDate :
1/7/1999 12:00:00 AM
Abstract :
High power 980 nm InGaAs/AlGaAs lasers consisting of an array of closely-spaced tapered waveguides, giving low beam divergence and hence high brightness, have been fabricated. The lateral beam divergence is in the range 6-8° (full-width at 1/e2) for all output powers. The vertical beam divergence, which is defined by the layer structure, is 44° (full-width at 1/e2). CW output powers of 9.5 W and a catastrophic optical mirror damage limit in excess of 170 mW/μm-facet have been demonstrated
Keywords :
III-V semiconductors; aluminium compounds; brightness; gallium arsenide; indium compounds; semiconductor laser arrays; waveguide lasers; 9.5 W; 980 nm; CW output power; InGaAs-AlGaAs; InGaAs/AlGaAs tapered laser array; beam divergence; brightness; catastrophic optical mirror damage; waveguide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990064
