Title :
Low current and highly reliable operation at 80°C of 650 nm 5 mW LDs for DVD applications
Author :
Ohya, M. ; Fujii, H. ; Doi, K. ; Endo, K.
Author_Institution :
ULSI Device Dev. Labs., NEC Corp., Shiga, Japan
fDate :
1/7/1999 12:00:00 AM
Abstract :
Low current, highly reliable operation at 80°C has been achieved for 650 nm band AlGaInP laser diodes (LDs) with a strained multiquantum well active layer on a (115)A substrate for the first time. The operation current was as low as 60 mA and the lifetime was 92 kh at 80°C, 5 mW. It was also shown that the operation current density is a dominant factor in determining the lifetime
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; laser reliability; quantum well lasers; video discs; 5 mW; 60 mA; 650 nm; 80 degC; 92000 h; AlGaInP; DVD applications; laser diodes; lifetime; operation current; operation current density; strained multiquantum well active layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990011
