Title :
Record high characteristic temperature (To=122 K) of 1.55 μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier
Author :
Ohnoki, N. ; Okazaki, G. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
fDate :
1/7/1999 12:00:00 AM
Abstract :
A record high characteristic temperature of 122 K (at 25-85°C) has been achieved in 1.55 μm strain-compensated AlGaInAs/AlGaInAs MQW lasers. A superlattice AlAs/AlInAs multiquantum barrier was used in the first successful realisation of long wavelength lasers. The threshold current density of the 50 μm-wide broad area 310 μm-long laser with cleaved facets is 1.1 kA/cm2 at 2°C. The slope efficiency decrease was only 9.5% from 25 to 85°C
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; semiconductor superlattices; 1.55 micron; 25 to 85 C; AlAs-AlInAs; AlGaInAs-AlGaInAs; broad area laser; characteristic temperature; cleaved facet; long wavelength laser; slope efficiency; strain compensated AlGaInAs/AlGaInAs MQW laser; superlattice AlAs/AlInAs multiquantum barrier; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990031
