Title :
Front-end modules with versatile dynamic EVM correction for 802.11 applications in the 2GHz band
Author :
Samelis, Apostolos ; Whittaker, Edward ; Ball, M. ; Bruce, Allan ; Nisbet, John ; Lui Lam ; Vaillancourt, William
Author_Institution :
Skyworks Solutions Inc., Bishop´s Stortford, UK
Abstract :
A SiGe BiCMOS, CMOS/SOI front-end module (FEM) for WLAN applications in the 2GHz band is presented. In the transmit mode it delivers 29dB small-signal gain and 3% EVM at 19.3dBm. In the receive mode, it achieves a noise figure of 1.85dB, 14dB gain, and an IIP3 level of 3dBm with 9mA current consumption. The FEM employs bias control circuitry that can be configured to address the linearity requirements of the WLAN standards family under varying environmental and channel conditions, including the emerging 802.11ac standard.
Keywords :
BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; Ge-Si alloys; elemental semiconductors; microwave integrated circuits; silicon; silicon compounds; silicon-on-insulator; wireless LAN; 802.11 applications; BiCMOS; CMOS/SOI FEM; IIP3 level; Si; SiGe; WLAN applications; bias control circuitry; current 9 mA; dynamic EVM correction; frequency 2 GHz; front-end modules; gain 14 dB; gain 29 dB; noise figure; receive mode; small-signal gain; transmit mode; Finite element analysis; IEEE 802.11 Standards; Modulation; Power amplifiers; Transient analysis; Wireless LAN; 802.11ac; Front end modules; WLAN; dynamic EVM; power amplifiers;
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2014 IEEE Topical Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4799-2298-7
DOI :
10.1109/PAWR.2014.6825719
