Title :
Room-temperature CW operation of lambda =1.55 mu m InGaAsP/InP ITG-DFB-BCRW lasers with contacted surface grating
Author :
Rast, A. ; Zach, A.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotechnik und Angewandte Elektronik, Tech. Univ., Munchen, Germany
fDate :
5/9/1991 12:00:00 AM
Abstract :
The structure and fabrication of the first quasi-index-guided DFB laser with contacted surface grating is described. This device is grown by a standard single step liquid phase epitaxy process without a corrugation overgrowth. Room-temperature CW-DFB-laser operation with a threshold current of 75 mA is reported. A sidemode-suppression ratio of 35 dB is achieved.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor junction lasers; 1.55 micron; 35 dB; 75 mA; InGaAsP-InP; contacted surface grating; fabrication; quasi-index-guided DFB laser; room-temperature CW operation; semiconductors; sidemode-suppression ratio; single step LPE; structure; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910507
