• DocumentCode
    1480571
  • Title

    Semi-insulating layers in InP obtained by Co or Fe ion implantation

  • Author

    Vidimari, F. ; Caldironi, M. ; Paola, A. Di ; Chen, R. ; Pellegrino, S.

  • Author_Institution
    Telettra SpA, Milano, Italy
  • Volume
    27
  • Issue
    10
  • fYear
    1991
  • fDate
    5/9/1991 12:00:00 AM
  • Firstpage
    817
  • Lastpage
    818
  • Abstract
    Ion implanted Co or Fe into n-type InP produced semi-insulating (SI) layers over a wide range of ion doses. The I/V characteristics of vertical metal-SI InP-n-type InP structures demonstrated resistivities up to 6*102 Omega cm at low bias levels and current densities as low as 12 mA/cm2 at 2.5 V for 400 keV ion energy implanted layers.
  • Keywords
    III-V semiconductors; cobalt; indium compounds; ion implantation; iron; 2.5 V; 400 keV; 600 ohmcm; I/V characteristics; InP semi-insulating layers; InP:Co; InP:Fe; current densities; ion energy implanted layers; ion implantation; range of ion doses; resistivities; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910513
  • Filename
    74946
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1480571