• DocumentCode
    1480647
  • Title

    A general noise and S-parameter deembedding procedure for on-wafer high-frequency noise measurements of MOSFETs

  • Author

    Chen, Chih-Hung ; Deen, M. Jamal

  • Author_Institution
    Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
  • Volume
    49
  • Issue
    5
  • fYear
    2001
  • fDate
    5/1/2001 12:00:00 AM
  • Firstpage
    1004
  • Lastpage
    1005
  • Abstract
    A general deembedding procedure using one “OPEN” and two “THRU” dummy structures for noise and scattering parameter deembedding based on cascade configurations is presented in this paper. This technique does not require any equivalent-circuit modeling of probe pads or interconnections. This deembedding procedure is valid for designs having interconnections with any kinds of geometries and for devices operated at frequencies of several tens of gigahertz
  • Keywords
    MOSFET; S-parameters; electric noise measurement; microwave field effect transistors; microwave measurement; semiconductor device measurement; MOSFETs; S-parameter deembedding procedure; cascade configurations; dummy structures; interconnection geometries; on-wafer high-frequency noise measurements; scattering parameter; Admittance; Councils; Geometry; MOSFETs; Matrix converters; Noise measurement; Performance evaluation; Probes; Radio frequency; Scattering parameters;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.920164
  • Filename
    920164
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1480647