Title :
A general noise and S-parameter deembedding procedure for on-wafer high-frequency noise measurements of MOSFETs
Author :
Chen, Chih-Hung ; Deen, M. Jamal
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
fDate :
5/1/2001 12:00:00 AM
Abstract :
A general deembedding procedure using one “OPEN” and two “THRU” dummy structures for noise and scattering parameter deembedding based on cascade configurations is presented in this paper. This technique does not require any equivalent-circuit modeling of probe pads or interconnections. This deembedding procedure is valid for designs having interconnections with any kinds of geometries and for devices operated at frequencies of several tens of gigahertz
Keywords :
MOSFET; S-parameters; electric noise measurement; microwave field effect transistors; microwave measurement; semiconductor device measurement; MOSFETs; S-parameter deembedding procedure; cascade configurations; dummy structures; interconnection geometries; on-wafer high-frequency noise measurements; scattering parameter; Admittance; Councils; Geometry; MOSFETs; Matrix converters; Noise measurement; Performance evaluation; Probes; Radio frequency; Scattering parameters;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
