Title :
Neutron-Induced Upsets in NAND Floating Gate Memories
Author :
Gerardin, Simone ; Bagatin, Marta ; Ferrario, Alberto ; Paccagnella, Alessandro ; Visconti, Angelo ; Beltrami, Silvia ; Andreani, Carla ; Gorini, Giuseppe ; Frost, Christopher D.
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy
fDate :
6/1/2012 12:00:00 AM
Abstract :
We investigate atmospheric neutron effects on floating-gate cells in NAND Flash memory devices. Charge loss is shown to occur, particularly at the highest program levels, causing raw bit errors in multilevel cell NAND, but to an extent that does not challenge current mandatory error correction specifications. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size.
Keywords :
flash memories; logic gates; sensitivity; NAND flash memory device; atmospheric neutron effects; floating-gate cells; mandatory error correction specification; multilevel cell NAND; neutron-induced upset; physical mechanisms; sensitivity; Bit error rate; Error correction codes; Flash memory; Materials; Neutrons; Nonvolatile memory; Threshold voltage; Flash memories; floating gate; neutrons; soft errors;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2012.2192440
