DocumentCode
1480775
Title
1.3 mu m InGaAsP ridge waveguide laser on GaAs and silicon substrates by thin film transfer
Author
Shieh, C.L. ; Chi, J.Y. ; Armiento, C.A. ; Haugsjaa, P.O. ; Negri, A. ; Wang, W.I.
Author_Institution
GTE Labs. Inc., Waltham, MA, USA
Volume
27
Issue
10
fYear
1991
fDate
5/9/1991 12:00:00 AM
Firstpage
850
Lastpage
851
Abstract
A new thin-film transfer technique has been developed that eliminates the handling of fragile, free-standing films. This, process was used to demonstrate the first long wavelength laser fabricated on a host substrate by a thin-film transfer technique. Ridge waveguide lasers operating at a wavelength of 1.3 mu m were fabricated on both GaAs and silicon substrates. The light-current characteristics of these transferred lasers were comparable to conventional lasers.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser transitions; optical waveguides; optical workshop techniques; semiconductor junction lasers; 1.3 micron; GaAs substrate; InGaAsP-GaAs; InGaAsP-Si; OEIC; Si substrate; host substrate; long wavelength laser; ridge waveguide laser; semiconductor lasers; thin film transfer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910532
Filename
74965
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