Title :
Efficiency Impact of Silicon Carbide Power Electronics for Modern Wind Turbine Full Scale Frequency Converter
Author :
Zhang, Hui ; Tolbert, Leon M.
Author_Institution :
Dept. of Electr. Eng., Tuskegee Univ., Tuskegee, AL, USA
Abstract :
Power electronics is an enabling technology found in most renewable energy generation systems. Because of its superior voltage blocking capabilities and fast switching speeds, silicon carbide (SiC) power electronics are considered for use in power conversion units in wind generation systems in this paper. The potential efficiency gains from the use of SiC devices in a wind generation system are explored by simulations, with the system modeling explained in detail. The performance of the SiC converter is analyzed and compared to its silicon counterpart at different wind speeds, temperatures, and switching frequencies. The quantitative results are based on SiC metal-oxide-semiconductor field-effect transistor (MOSFET) prototypes from Cree and modern Si insulated-gate bipolar transistor (IGBT) products. A conclusion is drawn that the SiC converters can improve the wind system power conversion efficiency and can reduce the system´s size and cost due to the low-loss, high-frequency, and high-temperature properties of SiC devices, even for one-for-one replacement for Si devices.
Keywords :
frequency convertors; insulated gate bipolar transistors; power MOSFET; power electronics; silicon compounds; wide band gap semiconductors; wind power plants; wind turbines; IGBT; MOSFET; SiC; insulated-gate bipolar transistor; metal-oxide-semiconductor field-effect transistor; power conversion units; renewable energy generation systems; silicon carbide power electronics; switching frequencies; system modeling; wind generation systems; wind system power conversion efficiency; wind turbine full scale frequency converter; Frequency conversion; Power conversion; Power electronics; Power generation; Renewable energy resources; Silicon carbide; Voltage; Wind energy generation; Wind power generation; Wind turbines; Converter; metal–oxide–semiconductor field-effect transistor (MOSFET); modeling; silicon carbide (SiC); wind generation;
Journal_Title :
Industrial Electronics, IEEE Transactions on
DOI :
10.1109/TIE.2010.2048292