DocumentCode
1480827
Title
Cryogenic operation of GaAs bipolar transistors with inverted base doping
Author
Dodd, Paul E. ; Lovejoy, M.L. ; Melloch, M.R. ; Lundstrom, Mark S.
Author_Institution
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Volume
27
Issue
10
fYear
1991
fDate
5/9/1991 12:00:00 AM
Firstpage
860
Lastpage
861
Abstract
The low temperature characteristics of GaAs homojunction bipolar transistors with heavily-doped base layers are investigated. An increase in current gain of about a factor of five is observed when the transistors are cooled from 300 K to 77 K. This improvement is attributed to improved emitter injection efficiency and reduced perimeter recombination.
Keywords
III-V semiconductors; bipolar transistors; cryogenics; doping profiles; electron-hole recombination; gallium arsenide; heavily doped semiconductors; 77 to 300 K; bipolar transistors; current gain; emitter injection efficiency; heavily-doped base layers; homojunction; inverted base doping; low temperature characteristics; perimeter recombination;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910538
Filename
74971
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