Title :
Design and Modeling Methodology of Vertical Interconnects for 3DI Applications
Author :
Gordin, Rachel ; Goren, David ; Shlafman, Shlomo ; Elad, Danny ; Scheuermann, Michael ; Young, Albert ; Liu, Fei ; Gu, Xiaoxiong ; Tyberg, Christy
Author_Institution :
IBM Haifa Res. Lab., Haifa, Israel
Abstract :
This paper presents a design and modeling methodology of vertical interconnects for three-dimensional integration (3DI) applications. Compact semi-analytical wideband circuit level models have been developed based on explicit expressions. The pronounced frequency dependent silicon substrate induced dispersion and loss effects are considered, as well as skin and proximity effects. The models have been verified against numerical computations (full wave HFSS and quasi-static Q3D solvers). A dedicated test site has been designed for broadband characterization (from 1 MHz up to 110 GHz) of TSVs within a dense farm.
Keywords :
elemental semiconductors; integrated circuit interconnections; integration; silicon; three-dimensional integrated circuits; 3DI application; Si; TSV broadband characterization; compact semi-analytical wideband circuit level model; dense farm; loss effect; pronounced frequency dependent silicon substrate induced dispersion; skin effect; three-dimensional integration application; vertical interconnects; Capacitance; Frequency dependence; Integrated circuit interconnections; Integrated circuit modeling; Silicon; Substrates; Through-silicon vias; Compact models; dispersion effect; frequency dependence; interconnect; three-dimensional integration (3DI); through-silicon via (TSV);
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2010.2101751
