Title :
10 Gbit/s MQW-DFB-SIBH lasers entirely grown by LPMOVPE
Author :
Speier, P. ; Bouayad-Amine, J. ; Cebulla, U. ; Dütting, K. ; Klenk, M. ; Laube, G. ; Mayer, H.P. ; Weinmann, R. ; Wünstel, K. ; Zielinski, E. ; Hildebrand, O.
Author_Institution :
Div. of SEL-Alcatel Res. Center, Optoelectron., Stuttgart, Germany
fDate :
5/9/1991 12:00:00 AM
Abstract :
The successful realisation of MQW DFB-SIBH lasers for 10 Gbit/s systems applications is reported. The SIBH laser structure is completely based on an LPMOVPE growth process, including selective LPMOVPE of semi-insulating current blocking layers. Threshold currents as low as 7 mA and total chip capacitances of 2.6 pF are measured resulting in 6 dBel(dBel=electrical dB) corner frequencies in excess of 11 GHz and rise/fall times of 36/44 ps, respectively. A significant reduction of the linewidth broadening compared to bulk lasers is observed which is attributed to a reduced alpha factor due to quantum wells. A chirp at -20 dB of 0.47 nm under 10 Gbit/s modulation is obtained.
Keywords :
distributed feedback lasers; optical communication equipment; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 10 Gbit/s; 2.6 pF; 36 ps; 44 ps; 7 mA; LPMOVPE; MQW DFB-SIBH lasers; alpha factor; chirp; corner frequencies; linewidth broadening; quantum wells; semi-insulating current blocking layers; total chip capacitances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910540
