Modeling, Simulation, and Validation of a Power SiC BJT

Author

Gachovska, Tanya ; Hudgins, Jerry L. ; Bryant, Angus ; Santi, Enrico ; Mantooth, H. Alan ; Agarwal, Anant K.

Author_Institution

Dept. of Electr. Eng., Univ. of Nebraska-Lincoln, Lincoln, NE, USA

Volume

27

Issue

10

fYear

2012

Firstpage

4338

Lastpage

4346

Abstract

This paper presents a physics-based model of a silicon carbide bipolar junction transistor and verification of its validity through experimental testing. The Fourier series solution is used to solve the ambipolar diffusion equation in the transistor collector region. The model is realized using MATLAB and Simulink. The experimental results of static operation and also the simulated and experimental results of switching waveforms are given.

Keywords

Fourier series; digital simulation; mathematics computing; power bipolar transistors; silicon compounds; wide band gap semiconductors; Fourier series solution; Matlab; SiC; Simulink; ambipolar diffusion equation; physics-based model silicon carbide bipolar junction transistor; power BJT; transistor collector region; Charge carrier processes; Doping; Equations; Integrated circuit modeling; Junctions; Mathematical model; Silicon carbide; Silicon carbide (SiC) bipolar junction transistor (BJT); power semiconductor modeling;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2012.2190622

Filename

6176233