DocumentCode :
1480910
Title :
Capacitive-access CAM cell and its read/write circuit implementation
Author :
Johnson, L.G.
Volume :
27
Issue :
10
fYear :
1991
fDate :
5/9/1991 12:00:00 AM
Firstpage :
876
Lastpage :
878
Abstract :
The implementation of a capacitive-access CAM cell along with its read/write circuitry are presented. Its advantages over a standard CAM cell are: feasibility of implementing multicell write operation, ready availability of masking of individual bits of a word for the write operation, and a higher order of cell data stability. A fully functional chip has been fabricated through MOSIS using 2 mu m double-metal CMOS technology.
Keywords :
CMOS integrated circuits; cellular arrays; content-addressable storage; integrated memory circuits; 2 micron; MOSIS; capacitive-access CAM cell; cell data stability; double-metal CMOS technology; masking; multicell write operation; read/write circuit implementation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910549
Filename :
74982
Link To Document :
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