DocumentCode :
1481036
Title :
Extended Quantum Correction Model Applied to Six-Band 
Valence Bands Near Silicon/Oxide Interfaces
Author :
Penzin, Oleg ; Paasch, Gernot ; Heinz, Frederik O. ; Smith, Lee
Author_Institution :
Synopsys Inc., Hillsboro, OR, USA
Volume :
58
Issue :
6
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
1614
Lastpage :
1619
Abstract :
The modified local density approximation (MLDA) was developed to describe quantum corrections due to size quantization near a semiconductor-oxide interface for parabolic ellipsoidal bands. In this paper, we propose an extended MLDA model in order to consider arbitrary band structures. The results are compared with the original MLDA model and to self-consistent Poisson-Schrödinger solutions using both constant effective mass and confined six-band Hamiltonians. The extended MLDA model is verified for three major surface orientations and high stress conditions.
Keywords :
MOSFET; Poisson distribution; Schrodinger equation; band structure; density functional theory; effective mass; interface structure; silicon; technology CAD (electronics); valence bands; Si; arbitrary band structures; confined six-band Hamiltonians; effective mass; extended MLDA model; extended quantum correction model; high stress conditions; modified local density approximation; parabolic ellipsoidal bands; quantum corrections; self-consistent Poisson-Schrodinger solutions; semiconductor-oxide interface; silicon-oxide interfaces; six-band valence bands; surface orientations; Computational modeling; Equations; Logic gates; Mathematical model; Numerical models; Semiconductor process modeling; Stress; Hole quantization; metal–oxide–semiconductor field-effect transistor (MOSFET); modified local density approximation (MLDA); stress; technology computer-aided design (TCAD);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2122264
Filename :
5739109
Link To Document :
