DocumentCode :
1481145
Title :
Design of a Concurrent Dual-Band 1.8–2.4-GHz GaN-HEMT Doherty Power Amplifier
Author :
Saad, Paul ; Colantonio, Paolo ; Piazzon, Luca ; Giannini, Franco ; Andersson, Kristoffer ; Fager, Christian
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden
Volume :
60
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
1840
Lastpage :
1849
Abstract :
In this paper, the design, implementation, and experimental results of a high-efficiency dual-band GaN-HEMT Doherty power amplifier (DPA) are presented. An extensive discussion about the design of the passive structures is presented showing different possible topologies of the dual-band DPA. One of the proposed topologies is used to design a dual-band DPA in hybrid technology for the frequency bands 1.8 and 2.4 GHz with the second efficiency peak at 6-dB output power back-off (OBO). For a continuous-wave output power of 20 W, the measured power-added efficiency (PAE) is 64% and 54% at 1.8 and 2.4 GHz, respectively. At -dB OBO, the resulting measured PAEs were 60% and 44% in the two frequency bands. Linearized concurrent modulated measurement using 10-MHz LTE signal with 7-dB peak-to-average-ratio (PAR) at 1.8 GHz and 10-MHz WiMAX signal with 8.5-dB PAR at 2.4 GHz shows an average PAE of 34%, at an adjacent channel leakage ratio of -48 dBc and -46 dBc at 1.8 and 2.4 GHz, respectively.
Keywords :
HEMT integrated circuits; III-V semiconductors; Long Term Evolution; UHF integrated circuits; WiMax; gallium compounds; power amplifiers; wide band gap semiconductors; GaN; LTE signal; WiMAX signal; adjacent channel leakage ratio; concurrent dual band HEMT Doherty power amplifier; frequency 1.8 GHz to 2.4 GHz; frequency 10 MHz; hybrid technology; linearized concurrent modulated measurement; output power back-off; passive structures; peak-to-average-ratio; power 20 W; power added efficiency; Dual band; Impedance; Load modeling; Power generation; Power transmission lines; Topology; Wideband; Doherty power amplifier (DPA); GaN-HEMT; dual-band amplifier; dual-band matching networks; high efficiency; power amplifier (PA);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2012.2189120
Filename :
6176279
Link To Document :
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