DocumentCode :
1481206
Title :
Choosing a thermal model for electrothermal simulation of power semiconductor devices
Author :
Ammous, Anis ; Ghedira, Sami ; Allard, Bruno ; Morel, Hervé ; Renault, Denise
Author_Institution :
CEGELY-INSA, Villeurbanne, France
Volume :
14
Issue :
2
fYear :
1999
fDate :
3/1/1999 12:00:00 AM
Firstpage :
300
Lastpage :
307
Abstract :
The literature proposes some thermal models needed for the electrothermal simulation of power electronic systems. This paper gives a useful analysis about the choice of the thermal model circuit networks, equivalent to a discretization of the heat equation by the finite difference method (FDM) and the finite-element method (FEM), and an analytic model developed by applying an internal approximation of the heat diffusion problem. The effect of the boundary condition representation and the introduced errors on temperature response at the heat source are studied. This study is advantageous, particularly for large surges of a short time duration
Keywords :
finite difference methods; finite element analysis; power semiconductor devices; semiconductor device models; thermal analysis; thermal diffusion; FEM; boundary condition representation; electrothermal simulation; finite difference method; finite-element method; heat diffusion problem; heat equation discretisation; heat source; power semiconductor devices; short time duration; temperature response errors; thermal model; thermal model circuit networks; Boundary conditions; Circuit simulation; Difference equations; Electrothermal effects; Finite difference methods; Finite element methods; Power electronics; Power system modeling; Surges; Temperature;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/63.750183
Filename :
750183
Link To Document :
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