• DocumentCode
    1481206
  • Title

    Choosing a thermal model for electrothermal simulation of power semiconductor devices

  • Author

    Ammous, Anis ; Ghedira, Sami ; Allard, Bruno ; Morel, Hervé ; Renault, Denise

  • Author_Institution
    CEGELY-INSA, Villeurbanne, France
  • Volume
    14
  • Issue
    2
  • fYear
    1999
  • fDate
    3/1/1999 12:00:00 AM
  • Firstpage
    300
  • Lastpage
    307
  • Abstract
    The literature proposes some thermal models needed for the electrothermal simulation of power electronic systems. This paper gives a useful analysis about the choice of the thermal model circuit networks, equivalent to a discretization of the heat equation by the finite difference method (FDM) and the finite-element method (FEM), and an analytic model developed by applying an internal approximation of the heat diffusion problem. The effect of the boundary condition representation and the introduced errors on temperature response at the heat source are studied. This study is advantageous, particularly for large surges of a short time duration
  • Keywords
    finite difference methods; finite element analysis; power semiconductor devices; semiconductor device models; thermal analysis; thermal diffusion; FEM; boundary condition representation; electrothermal simulation; finite difference method; finite-element method; heat diffusion problem; heat equation discretisation; heat source; power semiconductor devices; short time duration; temperature response errors; thermal model; thermal model circuit networks; Boundary conditions; Circuit simulation; Difference equations; Electrothermal effects; Finite difference methods; Finite element methods; Power electronics; Power system modeling; Surges; Temperature;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/63.750183
  • Filename
    750183