Title :
Evaluation of MESFET nonlinear intermodulation distortion reduction by channel-doping control
Author :
Pedro, José Carlos
Author_Institution :
Inst. de Telecominicacoes, Aveiro Univ., Portugal
fDate :
11/1/1997 12:00:00 AM
Abstract :
This paper is intended to evaluate the linearity that can be provided by general-purpose MESFETs. By a simple physics-based analysis and a practical amplifier design, it will be shown how educated device and bias-point selection can approximate intermodulation distortion (IMD) performance of some normal channel-doping profiles, for which previous theories would not be able to predict good IMD performance, to the one expected from MESFET devices with specially tailored doping profiles
Keywords :
Schottky gate field effect transistors; amplifiers; doping profiles; intermodulation distortion; semiconductor doping; MESFET amplifier; bias point; channel doping profile; linearity; nonlinear intermodulation distortion; Circuits; Design automation; Doping profiles; Intermodulation distortion; Linearity; MESFETs; Nonlinear distortion; Performance analysis; Power amplifiers; Semiconductor process modeling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
