Title :
Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors
Author :
Park, Jae Chul ; Kim, Sang Wook ; Kim, Chang Jung ; Lee, Ho-Nyeon
Author_Institution :
Semicond. Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea
fDate :
5/1/2012 12:00:00 AM
Abstract :
We fabricated lanthanum indium zinc oxide (IZO) (La-IZO) thin-film transistors (TFTs) using radio frequency cosputtering of IZO and lanthanum. The field-effect mobility and switching ratio of the La-IZO TFTs were 4.2 cm2·V-1·s-1 and on the order of 108, respectively, before thermal annealing and 3.02 cm2·V-1·s-1 and on the order of 1010, respectively, after thermal annealing at 150°C in air. Our La-IZO TFTs had better thermal stability than pure-IZO TFTs due to the stable ionic bond between La and O.
Keywords :
annealing; indium compounds; lanthanum; sputtering; thermal stability; thin film transistors; La-IZO; TFT; field effect mobility; lanthanum indium zinc oxide; low-temperature fabrication; radio frequency cosputtering; thermal annealing; thermal stability; thin film transistors; Annealing; Logic gates; Sputtering; Switches; Thermal stability; Thin film transistors; Indium; lanthanum; thin-film transistors (TFTs); zinc;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2188849
