DocumentCode :
1481610
Title :
High-density central I/O circuits for CMOS
Author :
Masleid, Robert P.
Author_Institution :
IBM Adv. Workstation. Div., Austin, TX, USA
Volume :
26
Issue :
3
fYear :
1991
fDate :
3/1/1991 12:00:00 AM
Firstpage :
431
Lastpage :
435
Abstract :
An I/O circuit design for VLSI CMOS is described that reduced the percentage of chip area occupied by I/O circuits from roughly 22% to under 3% for a 256 I/O chip. The technique, implemented in the IBM RISC System/6000 workstation processor chips, uses stackable macros to improve density per I/O signal by 10 times. The reorganization of the I/O structure relies on a top layer of metal dedicated to I/O circuit-to-pad wiring and power distribution. It takes full advantage of C4 solder bond package connection technology, which allows package connections to be located over chip circuitry. Decoupling I/O circuit layout from package connection layout and grouping by identical circuit type permits the full range of layout optimization techniques to be applied. I/O circuits are produced that are fully compatible with internal circuit terrain
Keywords :
CMOS integrated circuits; VLSI; buffer circuits; driver circuits; C4 solder bond; IBM RISC System/6000; VLSI CMOS; central I/O circuits; circuit-to-pad wiring; dedicated metal layer; layout optimization techniques; package connection technology; power distribution; stackable macros; workstation processor chips; Bonding; Ceramics; Circuit synthesis; Packaging; Protection; Reduced instruction set computing; Signal processing; Temperature; Very large scale integration; Workstations;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.75031
Filename :
75031
Link To Document :
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