DocumentCode
1481971
Title
Silicon Waveguide Integrated Germanium JFET Photodetector With Improved Speed Performance
Author
Wang, Jian ; Yu, Mingbin ; Lo, Guoqiang ; Kwong, Dim-Lee ; Lee, Sungjoo
Volume
23
Issue
12
fYear
2011
fDate
6/15/2011 12:00:00 AM
Firstpage
765
Lastpage
767
Abstract
This letter reports our recent results on the high-speed silicon-waveguided germanium junction-field-effect-transistor (JFET)-based photodetector. Although the Ge layer´s footprint on wafer is as small as 2 μm × 2 μm, low standby current (0.5 μA at 1 V), high responsivity (642 mA/W), and high speed (8 GHz) are achieved. The reported Ge JFET is a promising solution for photodetector´s further scaling-down.
Keywords
elemental semiconductors; germanium; high-speed optical techniques; integrated optics; junction gate field effect transistors; optical waveguides; photodetectors; silicon; Si-Ge; high-speed silicon waveguide; integrated germanium JFET photodetector; junction-field-effect-transistor; layer footprint; speed performance; standby current; voltage 1 V; Bandwidth; Dark current; Germanium; JFETs; Optical waveguides; Photodetectors; Silicon; Germanium; junction field-effect-transistor (JFET); photodetector;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2011.2132794
Filename
5739506
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