Title :
Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT
Author :
Loualiche, S. ; Ginudi, A. ; Le Corre, A. ; Lecrosnier, D. ; Vaudry, C. ; Henry, L. ; Guillemot, C.
Author_Institution :
France Telecom, Lannion, France
fDate :
4/1/1990 12:00:00 AM
Abstract :
A high-gap strained GaInP material chosen to increase Schottky barrier height on InP is discussed. This material has been used for the first time in high electron mobility transistor (HEMT) fabrication on InP. For these devices the best g/sub m/ of a 1.3- mu m gate HEMT is 300 mS/mm. Transistors of 3- mu m gate length are studied at low temperature (100 to 293 K). Their DC electrical characteristics improve upon cooling. The best improvement is measured at the lowest temperature (+54% for g/sub m/ at 105 K). The structure is stable and does not present any g/sub m/ or I/sub ds/ collapse at low temperature, unlike AlGaAs/GaAs heterostructures.<>
Keywords :
III-V semiconductors; cryogenics; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; 1.3 micron; 100 to 293 K; 3 micron; 300 mS; DC electrical characteristics; Ga/sub 0.18/In/sub 0.82/P-InP-Ga/sub 0.47/In/sub 0.53/As; HEMT; III-V semiconductor; Schottky barrier height; cooling; fabrication; heterostructures; high electron mobility transistor; high-gap strained GaInP material; low temperature; pseudomorphic device; transconductance; Composite materials; Fabrication; HEMTs; Indium phosphide; Lattices; MODFETs; Schottky barriers; Schottky diodes; Semiconductor materials; Temperature;
Journal_Title :
Electron Device Letters, IEEE
