Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT

Author

Loualiche, S. ; Ginudi, A. ; Le Corre, A. ; Lecrosnier, D. ; Vaudry, C. ; Henry, L. ; Guillemot, C.

Author_Institution

France Telecom, Lannion, France

Volume

11

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

153

Lastpage

155

Abstract

A high-gap strained GaInP material chosen to increase Schottky barrier height on InP is discussed. This material has been used for the first time in high electron mobility transistor (HEMT) fabrication on InP. For these devices the best g/sub m/ of a 1.3- mu m gate HEMT is 300 mS/mm. Transistors of 3- mu m gate length are studied at low temperature (100 to 293 K). Their DC electrical characteristics improve upon cooling. The best improvement is measured at the lowest temperature (+54% for g/sub m/ at 105 K). The structure is stable and does not present any g/sub m/ or I/sub ds/ collapse at low temperature, unlike AlGaAs/GaAs heterostructures.<>

Keywords

III-V semiconductors; cryogenics; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; 1.3 micron; 100 to 293 K; 3 micron; 300 mS; DC electrical characteristics; Ga/sub 0.18/In/sub 0.82/P-InP-Ga/sub 0.47/In/sub 0.53/As; HEMT; III-V semiconductor; Schottky barrier height; cooling; fabrication; heterostructures; high electron mobility transistor; high-gap strained GaInP material; low temperature; pseudomorphic device; transconductance; Composite materials; Fabrication; HEMTs; Indium phosphide; Lattices; MODFETs; Schottky barriers; Schottky diodes; Semiconductor materials; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.61773

Filename

61773