Title :
Monolithic integration of complementary HBTs by selective MOVPE
Author :
Slater, David B., Jr. ; Enquist, Paul M. ; Najjar, Fayez E. ; Chen, Mary Y. ; Hutchby, James A.
Author_Institution :
Res. Triangle Inst., Research Triangle Park, NC, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
The monolithic integration of n-p-n and p-n-p heterojunction bipolar transistors (HBTs) through the use of selective metal organic vapor phase epitaxial regrowth is discussed. This was accomplished by masking, patterning, and etching a p-n-p HBT wafer and then selectively regrowing an n-p-n structure in the etched areas. The selective epitaxial regrowth did not degrade the current gain of the p-n-p structure. Several complementary amplifier circuits were fabricated and tested successfully, demonstrating the feasibility of a monolithic complementary HBT technology.<>
Keywords :
bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit technology; linear integrated circuits; semiconductor growth; vapour phase epitaxial growth; complementary amplifier circuits; etching; heterojunction bipolar transistors; linear ICs; masking; monolithic complementary HBT technology; monolithic integration; n-p-n structure; p-n-p structure; patterning; selective MOVPE; vapor phase epitaxial regrowth; Circuit testing; Circuit topology; Epitaxial growth; Epitaxial layers; Etching; Heterojunction bipolar transistors; Monolithic integrated circuits; Silicon; Substrates; Zinc;
Journal_Title :
Electron Device Letters, IEEE
