Full-swing BiCMOS logic circuits with complementary emitter-follower driver configuration

Various full-swing BiCMOS logic circuits with complementary emitter-follower driver configurations are described. The performance of the circuits is demonstrated in a 1.2 μm complementary BiCMOS technology with a 6 GHz n-p-n and a 2 GHz p-n-p transistor. For the basic circuit, gate delay (fan-in=2, fan-out=1) is 366 ps and driving capability is 288 ps/pF at 4 V. Delay-power tradeoffs that depend on characteristics of the clamping diode between two base nodes of the complementary emitter-follower driver, parasitic capacitances at the two base nodes, and a technique that can be used to achieve full swing have been identified for these circuits. These circuits show leverage over the conventional BiCMOS circuit for reduced power-supply voltages