Title :
High-temperature silicon-on-insulator electronics for space nuclear power systems: requirements and feasibility
Author :
Fleetwood, D.M. ; Thome, F.V. ; Tsao, S.S. ; Dressendorfer, P.V. ; Dandini, V.J. ; Schwank, J.R.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
10/1/1988 12:00:00 AM
Abstract :
The authors performed a study to determine whether silicon very large-scale integrated circuits (VLSICs) can survive the high temperature (up to 300° C) and total-dose radiation environments (up to 10 Mrad over a 7-10-y system life) projected for a very-high power space nuclear reactor platform. It is shown that circuits built on bulk epitaxial silicon cannot meet the temperature requirement because of excessive junction leakage currents. However, circuits built on silicon-on-insulator (SOI) material can meet both the radiation and temperature requirements. It is also found that the temperature dependence of the threshold voltage of the SOI transistors is less than that of bulk transistors. Survivability of high-temperature SOI VLSICs in space, including immunity to transient and single-event upset, is also addressed
Keywords :
VLSI; circuit reliability; environmental degradation; field effect integrated circuits; radiation effects; radiation hardening (electronics); space vehicle power plants; 1×107 rad; 300 degC; 7 to 10 y; SOI transistors; Si; VLSICs; high temperature; junction leakage currents; monolithic IC; silicon-on-insulator electronics; single-event upset; space nuclear power systems; threshold voltage; total-dose radiation environments; very large-scale integrated circuits; very-high power space nuclear reactor platform; Annealing; Circuits; Inductors; Nuclear electronics; Nuclear power generation; Power generation; Power systems; Reactor instrumentation; Silicon on insulator technology; Temperature dependence;
Journal_Title :
Nuclear Science, IEEE Transactions on
