DocumentCode :
1482285
Title :
Low fringe-field and narrow-track MR heads
Author :
Guo, Yimin ; Chang, Jeiwei ; Ju, Kochan
Author_Institution :
Headway Technol. Inc., Milpitas, CA, USA
Volume :
33
Issue :
5
fYear :
1997
fDate :
9/1/1997 12:00:00 AM
Firstpage :
2827
Lastpage :
2829
Abstract :
The ABS focused ion beam technique was utilized to pattern MR heads into different geometry at track edges to study side-writing performance. By spinstand testing, both written track width and erase distance were measured. An analytical model was developed to analyze the dependence of the side-writing on the etching step length. Effects of the etching width, which affects the total etching time, were also studied
Keywords :
focused ion beam technology; magnetic heads; magnetoresistive devices; sputter etching; ABS focused ion beam technique; analytical model; erase distance; etching step length; fringe-field; narrow-track MR heads; side-writing performance; spinstand testing; total etching time; track edges; written track width; Analytical models; Disk drives; Disk recording; Etching; Geometry; Ion beams; Magnetic heads; Shape; Testing; Writing;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.617745
Filename :
617745
Link To Document :
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