• DocumentCode
    1482556
  • Title

    DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

  • Author

    Guhel, Y. ; Boudart, B. ; Gaquiere, Christopher ; Vellas, N. ; Trolet, J.L. ; Piccione, M.

  • Author_Institution
    EIC - LUSAC, Univ. de Caen Basse-Normandie, Cherbourg-Octeville, France
  • Volume
    46
  • Issue
    9
  • fYear
    2010
  • Firstpage
    650
  • Lastpage
    652
  • Abstract
    An original method is presented to improve DC electrical performance of AIGaAs/lnGaAs PHEMTs by using a low neutron radiation dose. An increase of the drain-source saturation current, a decrease of the knee voltage and a reduction of the leakage current of the Schottky contact are observed without degrading the current-gain cutoff frequency when the devices are irradiated with a neutron radiation dose of 1.2 ?? 1010 neutrons/cm2.
  • Keywords
    III-V semiconductors; Schottky barriers; aluminium compounds; gallium arsenide; heat radiation; high electron mobility transistors; indium compounds; leakage currents; neutron effects; AlGaAs-InGaAs; DC electrical performance; PHEMT; Schottky contact; current-gain cutoff frequency; drain-source saturation current; knee voltage; leakage current; low thermal neutron radiation dose;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.0070
  • Filename
    5457407
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1482556