DocumentCode :
1482556
Title :
DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose
Author :
Guhel, Y. ; Boudart, B. ; Gaquiere, Christopher ; Vellas, N. ; Trolet, J.L. ; Piccione, M.
Author_Institution :
EIC - LUSAC, Univ. de Caen Basse-Normandie, Cherbourg-Octeville, France
Volume :
46
Issue :
9
fYear :
2010
Firstpage :
650
Lastpage :
652
Abstract :
An original method is presented to improve DC electrical performance of AIGaAs/lnGaAs PHEMTs by using a low neutron radiation dose. An increase of the drain-source saturation current, a decrease of the knee voltage and a reduction of the leakage current of the Schottky contact are observed without degrading the current-gain cutoff frequency when the devices are irradiated with a neutron radiation dose of 1.2 ?? 1010 neutrons/cm2.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; gallium arsenide; heat radiation; high electron mobility transistors; indium compounds; leakage currents; neutron effects; AlGaAs-InGaAs; DC electrical performance; PHEMT; Schottky contact; current-gain cutoff frequency; drain-source saturation current; knee voltage; leakage current; low thermal neutron radiation dose;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2010.0070
Filename :
5457407
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1482556
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