Time-resolved thermal annealing of interface traps in aluminium gate-silicon oxide-silicon devices

Author

Burte, E.P. ; Matthies, Pamela

Author_Institution

Fraunhofer Arbeitsgruppe fur Integrierte Schaltungen, Erlangen, West Germany

Volume

35

Issue

5

fYear

1988

fDate

10/1/1988 12:00:00 AM

Firstpage

1113

Lastpage

1120

Abstract

The anneal kinetics of interface traps in aluminium gate-silicon oxide-silicon structures has been studied using capacitance-voltage measurements. The capacitors were annealed in forming gaps at temperatures ranging from 250°C to 620°C. AN exponential decay of the trap density with annealing time has been observed. The curve of the equilibrium value of trap density obtained after long annealing times versus temperature shows a U-shaped form with a minimum located near 450°C. A model based on the bimolecular reaction theory is proposed to explain the results obtained

Keywords

aluminium; annealing; capacitors; electron traps; elemental semiconductors; hole traps; interface electron states; metal-insulator-semiconductor structures; semiconductor technology; silicon; silicon compounds; 250 to 620 degC; Al-SiO₂-Si; MOS structure; aluminium gate-silicon oxide-silicon devices; anneal kinetics; annealing time; bimolecular reaction theory; capacitance-voltage measurements; capacitors; forming gaps; interface traps; semiconductors; thermal annealing; trap density; Aluminum; Annealing; Atomic measurements; Electron traps; Hydrogen; Kinetic theory; Nitrogen; Silicon; Substrates; Temperature distribution;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.7507

Filename

7507