DocumentCode :
1482802
Title :
Selective self-aligned emitter ledge formation for heterojunction bipolar transistors
Author :
Fresina, M.T. ; Hartmann, Q.J. ; Stillman, G.E.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Volume :
17
Issue :
12
fYear :
1996
Firstpage :
555
Lastpage :
556
Abstract :
We have demonstrated a heterojunction bipolar transistor (HBT) structure and fabrication process which produces a self-aligned emitter passivation ledge without the use of a realigned photoresist mask or additional dielectric etch masks. The novel HBT structure utilizes dual etch-stop layers in the emitter to allow the fabrication of a ledge using a simple, selective, wet-chemical etch process. This ledge technology has been successfully demonstrated in the InGaP/GaAs HBT material system.
Keywords :
III-V semiconductors; etching; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; semiconductor technology; InGaP-GaGe; InGaP/GaAs HBT; dual etch-stop layer; fabrication; heterojunction bipolar transistor; selective self-aligned emitter passivation ledge; wet-chemical etch; Dielectric materials; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; MOCVD; Noise reduction; Passivation; Resists; Wet etching;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.545768
Filename :
545768
Link To Document :
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